16 May 2013 Photoelectric performance degradation of millisecond laser-irradiated silicon photodiodes
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Proceedings Volume 8796, 2nd International Symposium on Laser Interaction with Matter (LIMIS 2012); 87960R (2013) https://doi.org/10.1117/12.2011267
Event: 2nd International Symposium on Laser Interaction with Matter (LIMIS 2012), 2012, Xi'an, Shaanxi, China
Abstract
The photoelectric parameters degradation of Si-based PIN photodiodes irradiated by 1064 nm millisecond Nd:YAG laser has been measured. The samples were the commercial silicon PIN photodiodes BPW34 with plastic package. The applied laser fluence levels range from 20J/cm2 to 1400J/cm2. Surface damage morphology, dark current and sensitivity were investigated for the irradiated photodiodes. It has been shown that the dark current was the first and the most sensitive degradation parameter, and we believe that the dislocation introduced by the tangential component of thermal stress in the [111] and [110] direction was the main reason. The sensitivity decrease until the dark current reach to μA magnitude and the surface have melted seriously, the finite element method was used to calculation the dopant redistribution process. It shows that the degradation of sensitivity depends greatly on the process under various applied laser fluencies.
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Zewen Li, Zewen Li, Chen Chen, Chen Chen, Xi Wang, Xi Wang, Yiming Zhang, Yiming Zhang, Hongchao Zhang, Hongchao Zhang, Zhonghua Shen, Zhonghua Shen, Xiaowu Ni, Xiaowu Ni, } "Photoelectric performance degradation of millisecond laser-irradiated silicon photodiodes", Proc. SPIE 8796, 2nd International Symposium on Laser Interaction with Matter (LIMIS 2012), 87960R (16 May 2013); doi: 10.1117/12.2011267; https://doi.org/10.1117/12.2011267
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