Effect of temperature on photoexcited charge carrier dynamics in Si-NCs/SiO2 superlattices

M. Kořínek; M. Kozák; F. Trojánek; D. Hiller; A. M. Hartel; S. Gutsch; M. Zacharias; P. Malý

doi:10.1117/12.2022723

13 September 2013 Effect of temperature and excitation intensity on photoexcited charge carrier dynamics in Si-NCs/SiO₂ superlattices

M. Kořínek, M. Kozák, F. Trojánek, D. Hiller, A. M. Hartel, S. Gutsch, M. Zacharias, P. Malý

Author Affiliations +

Proceedings Volume 8807, Nanophotonic Materials X; 88070V (2013) https://doi.org/10.1117/12.2022723
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

An experimental study of the temperature dependence of photoluminescence time decay in size-controlled silicon nanocrystals in silicon nanocrystal/SiO2 superlattices is reported. The samples were prepared using thermal evaporation and subsequent thermally induced phase separation. The slow (microseconds) decay line shape is described well by a stretched exponential. The temperature dependence of the photoluminescence dynamics can be understood in terms of thermal activation of recombination processes, including hopping of carriers between localized states. Additional hydrogen treatment causes an increase in both parameters of the stretched exponential function. This behavior is interpreted as a consequence of H2-passivation of dangling bonds defects.

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M. Kořínek, M. Kozák, F. Trojánek, D. Hiller, A. M. Hartel, S. Gutsch, M. Zacharias, and P. Malý "Effect of temperature and excitation intensity on photoexcited charge carrier dynamics in Si-NCs/SiO₂ superlattices", Proc. SPIE 8807, Nanophotonic Materials X, 88070V (13 September 2013); https://doi.org/10.1117/12.2022723

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