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3 May 1988 Gaas Quantum Well Intersubband Absorption Tunneling Detectors Compatible With 10 μm Optical Computing
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Proceedings Volume 0881, Optical Computing and Nonlinear Materials; (1988) https://doi.org/10.1117/12.944065
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
We discuss novel detectors and modulator structures fabricated from GaAs/AtxGai_xAs multiquantum well superlattices, which are compatible with high speed optical computing at the CO2 laser wavelength A = 10.6 μm. These components can be integrated with transparent GaAs optical waveguides and also with GaAs FETs or bipolar transistors for high speed electronic signal processing.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B F Levine, K K Choi, C G Bethea, J Walker, and R J Malik "Gaas Quantum Well Intersubband Absorption Tunneling Detectors Compatible With 10 μm Optical Computing", Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); https://doi.org/10.1117/12.944065
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