26 September 2013 Measurement of spin-flip scattering and photon echo response in GaMnAs
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Abstract
Four-wave mixing techniques are applied to Ga1-xMnxAs, providing new insight into the fundamental properties of the III-Mn-V semiconductors. Clear signatures of (s,p)-d hybridization associated with the MnGa substitutional impurity are observed in the spectrum of the four-wave mixing signal. Experiments on a ferromagnetic sample show no evidence of hole occupation in the valence band for x = 5%. A photon echo is observed on the interband transition, despite the strong exchange coupling and large defect density in this system. Rapid dephasing associated with Mn-hole spin-flip scattering is observed, with a measured upper bound on the spin-flip scattering time of 40 fs. An excitonic signature tied to many-body effects is observed in LT-GaAs.
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Kimberley C. Hall, Kimberley C. Hall, Daniel Webber, Daniel Webber, Murat Yildirim, Murat Yildirim, Sam A. March, Sam A. March, Reuble Mathew, Reuble Mathew, Angela Gamouras, Angela Gamouras, Margaret Dobrowolska, Margaret Dobrowolska, Xinyu Liu, Xinyu Liu, Jacek K. Furdyna, Jacek K. Furdyna, } "Measurement of spin-flip scattering and photon echo response in GaMnAs", Proc. SPIE 8813, Spintronics VI, 88132V (26 September 2013); doi: 10.1117/12.2018902; https://doi.org/10.1117/12.2018902
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