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26 September 2013 Nano plasmon device fabrications using dielectrophoretic (DEP) force
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Abstract
We propose a fabrication process using dielectrophoretic (DEP) force for plasmonic devices as a light source. The 100nm wide Au nanowires fabricated by e-beam lithography and lift-off were used to trap 25nm diameter cadmium selenide (CdSe) QDs on its end-facet with DEP force. DEP force was induced around the nanowire using 8 Vpp, 3MHz sine wave. An Electric field of 108 V/m order and electric field gradient of 1015 V/m2 order intensity were calculated with COMSOL multiphysics simulation tool. And the values are enough to induce DEP force for QD trapping. Before the QD manipulations, polystyrene bead was used which is more rigid and influenced by DEP force than QD. Concentration of 10-5% order and approximately 120sec reaction time are considered with polystyrene bead and QD manipulations are accomplished with the conditions. Finally, the QDs were manipulated to the nanowires array and ‘QD on nanowire’ nanostructure was formed as a practical plasmonic device using DEP force.
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J. Kim, C.-M. Kang, S. Kim, J.-k. F. Suh, H. J. Shin, and J. H. Park "Nano plasmon device fabrications using dielectrophoretic (DEP) force", Proc. SPIE 8816, Nanoengineering: Fabrication, Properties, Optics, and Devices X, 88160X (26 September 2013); https://doi.org/10.1117/12.2024637
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