Paper
19 September 2013 GaN-based light-emitting diodes by laser lift-off with electroplated copper
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Abstract
This study presents a GaN thin film light-emitting diode (TF-LED) on an electroplated flexible copper substrate to improve thermal conduction effect of the LED. The optoelectronic characteristics and stress effect of the GaN TF-LEDs on the electroplated flexible copper prepared by laser lift-off technique was examined. The surface of the peeled GaN TF-LED after laser lift-off process demonstrated a pore array. The GaN pore array surface was etched by photo-electrochemical method to form hexagonal pyramid hillocks on the surface using KOH solution. Then, freestanding peeled GaN TF-LEDs with the front surface protected by wax were immersed into 3M KOH solution at 10, 20, 30min under ultraviolet illuminations to perform the photo-electrochemical etching. Surface morphologies with and without photo-electrochemical etching were observed by field emission scanning electron microscope (FESEM) (LEO 1530).
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Wun-Wei Lin, Lung-Chien Chen, and Chung-An Chiou "GaN-based light-emitting diodes by laser lift-off with electroplated copper", Proc. SPIE 8818, Nanostructured Thin Films VI, 881815 (19 September 2013); https://doi.org/10.1117/12.2023894
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KEYWORDS
Gallium nitride

Copper

Etching

Light emitting diodes

Sapphire

Laser liftoff

Scanning electron microscopy

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