19 September 2013 Nanowires for next generation photovoltaics
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Abstract
A concept for a nanowire-based photovoltaic (PV) device is presented along with the requirements for achieving high photoconversion efficiency including nanowire morphology, crystalline structure, nanowire dimensions (diameter, period (spacing) and length), avoidance of misfit dislocations, low resistance contacts, controlled doping for p-n junctions, surface passivation, and current-matching. The state of the nanowire PV device field is presented.
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Ray R. LaPierre, "Nanowires for next generation photovoltaics", Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 88200A (19 September 2013); doi: 10.1117/12.2026241; https://doi.org/10.1117/12.2026241
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