19 September 2013 Vapor-liquid-solid growth of ⟨110⟩ silicon nanowire arrays
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Abstract
The epitaxial growth of <110> silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl4 as the source gas. A high percentage of <110> nanowires was obtained at high temperatures and reduced SiCl4 partial pressures. Transmission electron microscopy characterization of the <110> Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl4 process. The predominance of {111} facets obtained under these conditions promotes the growth of <110> SiNWs.
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Sarah M. Eichfeld, Sarah M. Eichfeld, Mel F. Hainey, Mel F. Hainey, Haoting Shen, Haoting Shen, Chito E. Kendrick, Chito E. Kendrick, Emily A. Fucinato, Emily A. Fucinato, Joanne Yim, Joanne Yim, Marcie R. Black, Marcie R. Black, Joan M. Redwing, Joan M. Redwing, } "Vapor-liquid-solid growth of ⟨110⟩ silicon nanowire arrays", Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 88200I (19 September 2013); doi: 10.1117/12.2026825; https://doi.org/10.1117/12.2026825
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