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25 September 2013 Wide band antireflection coatings deposited by atomic layer deposition
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Here we describe the development of optical coatings for silicon-based detectors for astronomy, planetary and terrestrial applications. We have used atomic layer deposition (ALD) to develop broadband (i.e. 320-1000 nm) antireflection (AR) coatings on silicon substrates with the ultimate goal of incorporating these AR coatings with existing detector technologies. Materials characterization was used to study film and interface quality of these coatings. We are able to achieve precision growth of single and multilayer films to significantly reduce reflection losses for this region of spectrum and provide tailored, repeatable performance targeted for specific applications.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
April D. Jewell, John Hennessy, Michael E. Hoenk, and Shouleh Nikzad "Wide band antireflection coatings deposited by atomic layer deposition", Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 88200Z (25 September 2013);

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