Paper
16 September 2013 Photoelectrochemical performance of W-doped BiVO4 thin-films deposited by spray pyrolysis
Stephen K. Holland, Melissa R. Dutter, David J. Lawrence, Barbara A Reisner, Thomas C. DeVore
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Abstract
The effect of tungsten doping and hydrogen annealing treatments on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting was studied. Thin films of BiVO4 were deposited on ITO-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) in the aqueous precursor. The 1.7 μm – 2.2 μm thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375 ºC in 3% H2 exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination. This performance enhancement was believed to be due to the formation of oxygen vacancies, which are shallow electron donors, in the films. Films doped with 1% or 5% tungsten from either STA or AMT exhibited reduced photoelectrochemical performance and greater sample-to-sample performance variations. Powder X-ray diffraction data of the undoped films indicated that they were comprised primarily of the monoclinic scheelite phase while unidentified phases were also present. Scanning electron microscopy showed slightly different morphology characteristics for the Wdoped films. It is surmised that the addition of W in the deposition process promoted the morphology differences and the formation of different phases, thus reducing the PEC performance of the photoanode samples. Significant PEC performance variability was also observed among films deposited using the described process.
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Stephen K. Holland, Melissa R. Dutter, David J. Lawrence, Barbara A Reisner, and Thomas C. DeVore "Photoelectrochemical performance of W-doped BiVO4 thin-films deposited by spray pyrolysis", Proc. SPIE 8822, Solar Hydrogen and Nanotechnology VIII, 88220F (16 September 2013); https://doi.org/10.1117/12.2025300
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Cited by 4 scholarly publications.
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KEYWORDS
Tungsten

Doping

Annealing

Bismuth

Vanadium

Ultrasonics

Hydrogen

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