Crystallographic study of phases present in CuInSe2 absorber layers produced by laser annealing co-electrodeposited precursors

H. J. Meadows; A. Bhatia; C. Stefan; S. Schorr; M. A. Scarpulla; P. J. Dale

doi:10.1117/12.2024084

11 September 2013 Crystallographic study of phases present in CuInSe₂ absorber layers produced by laser annealing co-electrodeposited precursors

H. J. Meadows, A. Bhatia, C. Stefan, S. Schorr, M. A. Scarpulla, P. J. Dale

Author Affiliations +

Proceedings Volume 8823, Thin Film Solar Technology V; 882302 (2013) https://doi.org/10.1117/12.2024084
Event: SPIE Solar Energy + Technology, 2013, San Diego, California, United States

Abstract

For the production of high efficiency thin film, Cu(In,Ga)Se2 solar cells, absorber layers with grain sizes of a few hundred nanometers and without detrimental secondary phases are favored. Co-electrodeposition offers a low-cost and material efficient synthesis route, where, in a single step, films containing CuInSe2 are formed. However, the material is nanocrystalline, constitutes multiple phases and has poor photovoltaic properties 1. Therefore a subsequent annealing step is required to produce absorber layers suitable for use in photovoltaic devices. Laser annealing has been demonstrated to improve crystallinity, stimulate atomic diffusion and develop opto-electronic properties when compared to the precursor ². In this work, high resolution X-ray diffraction was used in order to assess the presence of secondary phases in the absorber layer. All diffractograms of laser annealed films exhibited an additional, unknown peak, measurable through the full depth of the material which is independent of precursor composition, annealing time or laser flux. Evaluation of literature on codeposited CuInSe₂, combined with Rietveld refinement suggests a number of possible identities for this peak. The candidates in order of most likely to least likely are structural defects, In₂Se₃, and CuIn₃Se₅. We consider the impact that each of these would have on a device formed via this process and thus its success as a new manufacturing route for CuInSe₂ solar cells.

Citation Download Citation

H. J. Meadows, A. Bhatia, C. Stefan, S. Schorr, M. A. Scarpulla, and P. J. Dale "Crystallographic study of phases present in CuInSe₂ absorber layers produced by laser annealing co-electrodeposited precursors", Proc. SPIE 8823, Thin Film Solar Technology V, 882302 (11 September 2013); https://doi.org/10.1117/12.2024084

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available