11 September 2013 Thin multi-junction solar cells of III-V materials to advance solar energy harvesting
Author Affiliations +
Significant advancements in photovoltaic solar cells are required to support large-scale energy demands with solar power. The first generation of solar cells (SC) available today uses Si. While Si is highly abundant and these types of SC can be easily manufactured, the best power conversion efficiency is only 24%. Developing photovoltaic SC using III-V materials may increase the efficiency while decreasing the manufacturing costs associated with cell fabrication. This paper studies the opportunity to improve two-junctions solar cells made of III-V materials by making the layers very thin and including the antireflective layer in the first junction. In terms of light harvesting, the anti-reflective layer made of a semiconductor is shown to absorb the most part of the incident light.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Castelletto, S. Castelletto, A. Parker, A. Parker, } "Thin multi-junction solar cells of III-V materials to advance solar energy harvesting", Proc. SPIE 8823, Thin Film Solar Technology V, 88230R (11 September 2013); doi: 10.1117/12.2023549; https://doi.org/10.1117/12.2023549


Solar cells based on InP/GaP/Si structure
Proceedings of SPIE (October 31 2016)
Influence of Si doping on InAs GaAs quantum dot solar...
Proceedings of SPIE (February 23 2017)
Manufacturing Experience With GaAs Solar Cells
Proceedings of SPIE (November 20 1986)
Status of Nonsilicon Photovoltaic Solar Cell Research
Proceedings of SPIE (November 25 1980)
Microanalysis of Solar Cells
Proceedings of SPIE (November 25 1980)
High-Efficiency Crystalline Tandem Cells
Proceedings of SPIE (September 08 1983)

Back to Top