11 September 2013 Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells
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Abstract
Large area (72 cm2) doping inversed HIT solar cells (n-a-Si:H/i-a-Si:H/p-c-Si) were investigated by High Resolution Transmission Electron Microscopy (HR-TEM), Spectroscopic Ellipsometry (SE), Fourier Transform Infrared Attenuated Total Reflection spectroscopy (FTIR-ATR) and current-voltage (I-V) measurement. Mixture of microcrystalline and amorphous phase was identified via HR-TEM picture at the interface of i-a-Si:H/p-c-Si heterojunction. Using multilayer and Effective Medium Approximation (EMA) to the SE data, excellent fit was obtained, describing the evolution of microstructure of a-Si:H deposited at 225 °C on p-c-Si. Cody energy gap with combination of FTIR-ATR analyses were consistent with HRTEM and SE results in terms of mixture of microcrystalline and amorphous phase. Presence of such hetero-interface resulted poor open circuit voltage, Voc, of the fabricated solar cell devices, determined by I-V measurement under 1 sun. Moreover, Voc was also estimated from dark I-V analysis, revealing consistent Voc values. Efficiencies of fabricated cells over complete c-Si wafer (72 cm2) were calculated as 4.7 and 9.2 %. Improvement in efficiency was interpreted due to the back surface cleaning and selecting aluminum/silver alloy as front contact.
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Özlem Pehlivan, Özlem Pehlivan, Deneb Menda, Deneb Menda, Okan Yilmaz, Okan Yilmaz, Alp Osman Kodolbaş, Alp Osman Kodolbaş, Orhan Özdemir, Orhan Özdemir, Özgur Duygulu, Özgur Duygulu, Kubilay Kutlu, Kubilay Kutlu, Mehmet Tomak, Mehmet Tomak, } "Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells", Proc. SPIE 8823, Thin Film Solar Technology V, 88230T (11 September 2013); doi: 10.1117/12.2025392; https://doi.org/10.1117/12.2025392
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