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25 September 2013 PbS quantum dot thin film solar cells using a CdS window layer
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We describe results of our investigations of the structural, optical, and electronic properties of PbS-QD films fabricated using layer-by-layer dip coating based on 1,2-ethanedithiol as an insolubilizing agent. Our investigations extend to a study of the photovoltaic properties of heterojunction thin film solar cells fabricated by sputter-deposition of a CdS ntype thin film followed by deposition of a PbS-QD thin film. Our CdS/PbS-QD solar cells exhibit open circuit voltage in excess of previously reported PbS-QD solar cells. Under standard simulated AM1.5G illumination, we observe short circuit current density as high as 12 mA cm-2, open circuit voltage as high as 0.65 V, and a maximum efficiency of 3.3%.
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Khagendra P. Bhandari, Hasitha Mahabaduge, Jianbo Gao, and Randy J. Ellingson "PbS quantum dot thin film solar cells using a CdS window layer", Proc. SPIE 8824, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, 88240I (25 September 2013);

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