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18 September 2013 Printing technique dependent charge carrier velocity distribution in organic thin film transistors
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Abstract
In this study we investigated the influence of the deposition technique on the surface topology and the resulting device performance in organic thin film transistors (OTFT). We varied the parameters of flexographic and gravure printing for the organic semiconductor (OSC) and did multilayer gravure printing for the dielectric, respectively. Therefore, we manufactured transistors in bottom contact top gate architecture and compared them to spin coated samples. As investigation tool for OTFTs, the charge carrier velocity distribution is correlated with the optical characteristics of the printed layers. We found a dependency of the printing technique on the surface topology of the semiconductor and, due to the resulting increase of the channel length, a broadening of the charge carrier velocity distribution. For the dielectric we found a dependency on the layer thickness which seems to be independent from the deposition technique.
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Simone Ganz, Sebastian Pankalla, Hans Martin Sauer, Manfred Glesner, and Edgar Doersam "Printing technique dependent charge carrier velocity distribution in organic thin film transistors", Proc. SPIE 8831, Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, 883114 (18 September 2013); https://doi.org/10.1117/12.2023244
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