18 September 2013 Light programmable organic transistor memory device based on hybrid dielectric
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Abstract
We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.
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Xiaochen Ren, Xiaochen Ren, Paddy K. L. Chan, Paddy K. L. Chan, } "Light programmable organic transistor memory device based on hybrid dielectric", Proc. SPIE 8831, Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, 88311E (18 September 2013); doi: 10.1117/12.2022984; https://doi.org/10.1117/12.2022984
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