30 September 2013 The low-frequency noise spectrum analysis of the reliability of the InGaN LED
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Abstract
In recent years, with extensive use of InGaN LED, estimation of LED quality and improvement of LED reliability has become very important. In this report, the noise spectrum measurement techniques were used to estimate the reliability of InGaN LED devices and compare its reliability with its ESD tolerance test result. Experimental results show that the noise spectrum measurement more effectively distinguishes the LED device reliability than that of the current voltage curve measurement. EMMI, SEM and TEM images show that noise source and cause of failure of the LED device are attributed to poor quality of the SiO2 and ITO interface.
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Tzung-Te Chen, Chun-Fan Dai, Chun-Wen Chu, Han-Kuei Fu, Chien-Ping Wang, Pei-Ting Chou, "The low-frequency noise spectrum analysis of the reliability of the InGaN LED", Proc. SPIE 8835, LED-based Illumination Systems, 88350Z (30 September 2013); doi: 10.1117/12.2026584; https://doi.org/10.1117/12.2026584
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