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28 September 2013 Ultrafast spectroscopy of hot electron and hole dynamics in GaP
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Abstract
This work analyzes ultrafast carrier dynamics in GaP under intense photoexcitation. The dynamics are initially dominated by hot electron scattering from the central Γ valley to the X7 sidevalley over 700 fs and X6 sidevalley over 4 ps. Subsequent pump-fluence-dependent relaxation is observed over 30 to 52 ps for as pump fluence increases. This prolonged energy relaxation is ascribed to impeded phonon decay. Experimental and theoretical results are shown to provide evidence for a hot phonon bottleneck at the high fluences. The implications of these ultrafast carrier dynamics are discussed for emerging GaP applications.
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Christopher M. Collier, Brandon Born, Xian Jin, and Jonathan F. Holzman "Ultrafast spectroscopy of hot electron and hole dynamics in GaP", Proc. SPIE 8845, Ultrafast Imaging and Spectroscopy, 88450U (28 September 2013); https://doi.org/10.1117/12.2023798
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