24 September 2013 Highly efficient quantum dot-based photoconductive THz materials and devices
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Abstract
We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, ≤850 nm and ≤1300 nm.
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E. U. Rafailov, E. U. Rafailov, R. Leyman, R. Leyman, D. Carnegie, D. Carnegie, N. Bazieva, N. Bazieva, } "Highly efficient quantum dot-based photoconductive THz materials and devices", Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 88460I (24 September 2013); doi: 10.1117/12.2023673; https://doi.org/10.1117/12.2023673
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