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24 September 2013 Nanotransistor based THz plasma detectors: low tempeatures, graphene, linearity, and circular polarization studies
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Abstract
Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the low temperatures operation, linearity, and circular polarization studies of nanometer scale field effect transistors for the detection of terahertz radiation. Also first results on graphene transistors are discussed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Knap, D. But, N. Diakonova, D. Coquillat, M. S. Vitiello, S. Blin, A. El Fatimy, F. Teppe, A. Tredicucci, T. Nagatsuma, and S. Ganichev "Nanotransistor based THz plasma detectors: low tempeatures, graphene, linearity, and circular polarization studies", Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 88460M (24 September 2013); https://doi.org/10.1117/12.2024206
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