24 September 2013 Field effect transistor as detector of THz radiation helicity
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Abstract
We use two antenna model to develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect is due to the mixing of the ac signals produced in the channel by the two antennas. We obtain the helicity-dependent part of the photoresponse and its dependence on the antenna impedance, gate length, and gate voltage.
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K. S. Romanov, K. S. Romanov, N. Dyakonova, N. Dyakonova, D. B. But, D. B. But, F. Teppe, F. Teppe, W. Knap, W. Knap, M. I. Dyakonov, M. I. Dyakonov, C. Drexler, C. Drexler, P. Olbrich, P. Olbrich, J. Karch, J. Karch, M. Schafberger, M. Schafberger, S. Ganichev, S. Ganichev, Yu. Mityagin, Yu. Mityagin, O. Klimenko, O. Klimenko, "Field effect transistor as detector of THz radiation helicity", Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 88460N (24 September 2013); doi: 10.1117/12.2022264; https://doi.org/10.1117/12.2022264
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