24 September 2013 Transient mobility and photoconductive terahertz emission with GaP
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Abstract
GaP is investigated for photoconductive terahertz (THz) generation. It is shown that the atypical bandstructure of GaP, with a central high-mobility valley and low-mobility sidevalleys, can be exploited to form a transient high-mobility state. The subsequent scattering and relaxation of hot electrons into and within the lower-mobility sidevalleys leaves the material in a relaxed low-conduction state. The experimental and theoretical study shows that ultrafast transient mobility, occurring over 800 fs, can create broadband THz pulses with reduced recovery times (and low leakage currents). The impacts of these findings are discussed for efficient and portable next-generation THz systems.
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Christopher M. Collier, Christopher M. Collier, Brandon Born, Brandon Born, Xian Jin, Xian Jin, Timothy M. Westgate, Timothy M. Westgate, Max Bethune-Waddell, Max Bethune-Waddell, Mark H. Bergen, Mark H. Bergen, Jonathan F. Holzman, Jonathan F. Holzman, } "Transient mobility and photoconductive terahertz emission with GaP", Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 884616 (24 September 2013); doi: 10.1117/12.2023764; https://doi.org/10.1117/12.2023764
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