25 September 2013 Laser-induced 2D periodic structures of charged particles concentration in semiconductor under the condition of optical bistability existence
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Abstract
We analyze evolution of laser-induced 2D periodic structures in semiconductor under the condition of optical bistability occuring. Optical bistability appears due to nonlinear dependence of semiconductor absorption coefficient on charged particles concentration because of both the Fermi energy level renormalization and the Burstein-Moss effect. The electron mobility, diffusion of electrons and laser-induced electric field are taken into account for analyzing the laser pulse propagation in the semiconductor. We found out various modes of laser-induced spatial structures developing of charged particles concentrations in dependence of optical intensity and the absorption coefficient. One of them consists in periodic appearance and moving of stable spatial electrons distribution. We discuss also the finite-difference schemes, which can be used for computer simulation of considered problem.
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Vyacheslav A. Trofimov, Mariya M. Loginova, Vladimir A. Egorenkov, "Laser-induced 2D periodic structures of charged particles concentration in semiconductor under the condition of optical bistability existence", Proc. SPIE 8847, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII, 88470G (25 September 2013); doi: 10.1117/12.2022560; https://doi.org/10.1117/12.2022560
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