Growth and characterization of CdTeSe for room-temperature radiation detector applications

U. N. Roy; A. E. Bolotnikov; G. S. Camarda; Y. Cui; A. Hossain; G. Yang; R. B. James; A. Fauler; M. Fiederle; M. Sowinska; G. Hennard; P. Siffert

doi:10.1117/12.2027081

26 September 2013 Growth and characterization of CdTeSe for room-temperature radiation detector applications

U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, G. Yang, R. B. James, A. Fauler, M. Fiederle, M. Sowinska, G. Hennard, P. Siffert

Author Affiliations +

Proceedings Volume 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV; 885210 (2013) https://doi.org/10.1117/12.2027081
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

The near-unity segregation coefficient of Se in a CdTe matrix ensures the compositional homogeneity, both axial- and radial, of the CdTeSe ternary compound, so making it a material of choice for room- temperature radiation detectors. In this study, we grew CdTeSe crystals by the Traveling Heater Method (THM), using Te as the solvent, and characterized the crystals by IR transmission microscopy, white-beam X-ray diffraction topography, and low-temperature photoluminescence. The total average concentration of the secondary phases obtained for the CdTeSe sample was about 7x10⁴ cm^-3 for crystals grown at two different laboratories. The best resistivity registered was 5x10⁹ ohm-cm, and the estimated μτ product for the electrons was 3-4x10^-3 cm²/V.

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U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, G. Yang, R. B. James, A. Fauler, M. Fiederle, M. Sowinska, G. Hennard, and P. Siffert "Growth and characterization of CdTeSe for room-temperature radiation detector applications", Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 885210 (26 September 2013); https://doi.org/10.1117/12.2027081

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