26 September 2013 Growth and characterization of CdTeSe for room-temperature radiation detector applications
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Abstract
The near-unity segregation coefficient of Se in a CdTe matrix ensures the compositional homogeneity, both axial- and radial, of the CdTeSe ternary compound, so making it a material of choice for room- temperature radiation detectors. In this study, we grew CdTeSe crystals by the Traveling Heater Method (THM), using Te as the solvent, and characterized the crystals by IR transmission microscopy, white-beam X-ray diffraction topography, and low-temperature photoluminescence. The total average concentration of the secondary phases obtained for the CdTeSe sample was about 7x104 cm-3 for crystals grown at two different laboratories. The best resistivity registered was 5x109 ohm-cm, and the estimated μτ product for the electrons was 3-4x10-3 cm2/V.
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U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, G. Yang, R. B. James, A. Fauler, M. Fiederle, M. Sowinska, G. Hennard, P. Siffert, "Growth and characterization of CdTeSe for room-temperature radiation detector applications", Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 885210 (26 September 2013); doi: 10.1117/12.2027081; https://doi.org/10.1117/12.2027081
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