26 September 2013 Boron selenide semiconductor detectors for thermal neutron counting
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Thermal neutron detectors in planar configuration were fabricated from B2Se3 (Boron Selenide) crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. In this study, the resistivity of crystals is reported and the collected pulse height spectra are presented for devices irradiated with the 241AmBe neutron source. Long-term stability of the B2Se3 devices for neutron detection under continuous bias and without being under continuous bias was investigated and the results are reported. The B2Se3 devices showed response to thermal neutrons of the 241AmBe source.
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Alireza Kargar, Alireza Kargar, Joshua Tower, Joshua Tower, Leonard Cirignano, Leonard Cirignano, Kanai Shah, Kanai Shah, "Boron selenide semiconductor detectors for thermal neutron counting", Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 88521M (26 September 2013); doi: 10.1117/12.2027078; https://doi.org/10.1117/12.2027078


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