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26 September 2013 Characteristics of a ceramic-substrate x-ray diode and its application to computed tomography
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X-ray photon counting was performed using a silicon X-ray diode (Si-XD) at a tube current of 2.0 mA and tube voltages ranging from 50 to 70 kV. The Si-XD is a high-sensitivity Si photodiode selected for detecting X-ray photons, and Xray photons are directly detected using the Si-XD without a scintillator. Photocurrent from the diode is amplified using charge-sensitive and shaping amplifiers. To investigate the X-ray-electric conversion, we performed the event-pulseheight (EPH) analysis using a multichannel analyzer. Photon-counting computed tomography (PC-CT) is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 10 min at a scan step of 0.5 mm and a rotation step of 1.0°. In PC-CT at a tube voltage of 70 kV, the image contrast of iodine media fell with increasing lower-level voltage of the event pulse using a comparator.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manabu Watanabe, Eiichi Sato, Hajime Kodama, Osahiko Hagiwara, Hiroshi Matsukiyo, Akihiro Osawa, Toshiyuki Enomoto, Shinya Kusachi, Shigehiro Sato, and Akira Ogawa "Characteristics of a ceramic-substrate x-ray diode and its application to computed tomography", Proc. SPIE 8853, Medical Applications of Radiation Detectors III, 885304 (26 September 2013);

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