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26 September 2013 Characteristics of a ceramic-substrate x-ray diode and its application to computed tomography
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Abstract
X-ray photon counting was performed using a silicon X-ray diode (Si-XD) at a tube current of 2.0 mA and tube voltages ranging from 50 to 70 kV. The Si-XD is a high-sensitivity Si photodiode selected for detecting X-ray photons, and Xray photons are directly detected using the Si-XD without a scintillator. Photocurrent from the diode is amplified using charge-sensitive and shaping amplifiers. To investigate the X-ray-electric conversion, we performed the event-pulseheight (EPH) analysis using a multichannel analyzer. Photon-counting computed tomography (PC-CT) is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 10 min at a scan step of 0.5 mm and a rotation step of 1.0°. In PC-CT at a tube voltage of 70 kV, the image contrast of iodine media fell with increasing lower-level voltage of the event pulse using a comparator.
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Manabu Watanabe, Eiichi Sato, Hajime Kodama, Osahiko Hagiwara, Hiroshi Matsukiyo, Akihiro Osawa, Toshiyuki Enomoto, Shinya Kusachi, Shigehiro Sato, and Akira Ogawa "Characteristics of a ceramic-substrate x-ray diode and its application to computed tomography", Proc. SPIE 8853, Medical Applications of Radiation Detectors III, 885304 (26 September 2013); https://doi.org/10.1117/12.2025364
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