Microwave Response Of An HEMT Photoconductor

P C Claspy; K B. Bhasin

doi:10.1117/12.944179

12 April 1988 Microwave Response Of An HEMT Photoconductor

P C Claspy, K B. Bhasin

Proceedings Volume 0886, Optoelectronic Signal Processing for Phased-Array Antennas; (1988) https://doi.org/10.1117/12.944179
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Citation Download Citation

P C Claspy and K B. Bhasin "Microwave Response Of An HEMT Photoconductor", Proc. SPIE 0886, Optoelectronic Signal Processing for Phased-Array Antennas, (12 April 1988); https://doi.org/10.1117/12.944179

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