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12 April 1988 Microwave Response Of An HEMT Photoconductor
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Proceedings Volume 0886, Optoelectronic Signal Processing for Phased-Array Antennas; (1988) https://doi.org/10.1117/12.944179
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P C Claspy and K B. Bhasin "Microwave Response Of An HEMT Photoconductor", Proc. SPIE 0886, Optoelectronic Signal Processing for Phased-Array Antennas, (12 April 1988); https://doi.org/10.1117/12.944179
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