19 September 2013 High-performance SWIR sensing from colloidal quantum dot photodiode arrays
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Abstract
RTI has demonstrated a novel photodiode technology based on IR-absorbing solution-processed PbS colloidal quantum dots (CQD) that can overcome the high cost, limited spectral response, and challenges in the reduction in pixel size associated with InGaAs focal plane arrays. The most significant advantage of the CQD technology is ease of fabrication. The devices can be fabricated directly onto the ROIC substrate at low temperatures compatible with CMOS, and arrays can be fabricated at wafer scale. Further, device performance is not expected to degrade significantly with reduced pixel size. We present results for upward-looking detectors fabricated on Si substrates with sensitivity from the UV to ~1.7 μm, compare these results to InGaAs detectors, and present measurements of the CQD detectors temperature dependent dark current.
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Ethan Klem, Ethan Klem, Jay Lewis, Jay Lewis, Chris Gregory, Chris Gregory, Garry Cunningham, Garry Cunningham, Dorota Temple, Dorota Temple, Arvind D'Souza, Arvind D'Souza, Ernest Robinson, Ernest Robinson, P. S. Wijewarnasuriya, P. S. Wijewarnasuriya, Nibir Dhar, Nibir Dhar, } "High-performance SWIR sensing from colloidal quantum dot photodiode arrays", Proc. SPIE 8868, Infrared Sensors, Devices, and Applications III, 886806 (19 September 2013); doi: 10.1117/12.2026972; https://doi.org/10.1117/12.2026972
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