19 September 2013 CMOS compatible IR sensors by cytochrome c protein
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Abstract
In recent years, due to the progression of the semiconductor industrial, the uncooled Infrared sensor – microbolometer has opened the opportunity for achieving low cost infrared imaging systems for both military and commercial applications. Therefore, various fabrication processes and different materials based microbolometer have been developed sequentially. The cytochrome c (protein) thin film has be reported high temperature coefficient of resistance (TCR), which is related to the performance of microbolometer directly. Hence the superior TCR value will increase the performance of microbolometer. In this paper, we introduced a novel fabrication process using aluminum which is compatible with the Taiwan Semiconductor Manufacture Company (TSMC) D35 2P4M process as the main structure material, which benefits the device to integrate with readout integrated circuit (ROIC).The aluminum split structure is suspended by sacrificial layer utilizing the standard photolithography technology and chemical etching. The height and thickness of the structure are already considered. Besides, cytochrome c solutions were ink-jetted onto the aluminum structure by using the inkjet printer, applying precise control of the Infrared absorbing layer. In measurement, incident Infrared radiation can be detected and later the heat can be transmitted to adjacent pads to readout the signal. This approach applies an inexpensive and simple fabrication process and makes the device suitable for integration. In addition, the performance can be further improved with low noise readout circuits.
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Chien-Jen Liao, Guo-Dung Su, "CMOS compatible IR sensors by cytochrome c protein", Proc. SPIE 8868, Infrared Sensors, Devices, and Applications III, 88680F (19 September 2013); doi: 10.1117/12.2023261; https://doi.org/10.1117/12.2023261
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