19 September 2013 MWIR type-II InAs/GaSb superlattice interband cascade photodetectors
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Abstract

Recently, a new strategy used to achieve high operation temperature (HOT) infrared photodetectors including cascade devices and alternate materials such as type-II superlattices has been observed. Another method to reduce detector’s dark current is reducing volume of detector material via a concept of photon trapping detector.

In this paper, the performance of a novel HOT detector designing so-called interband cascade type-II MWIR InAs/GaSb superlattice detectors is presented. Detailed analysis of the detector’s performance (such as dark current, RA product, current responsivity, and response time) versus bias voltage and operating temperatures (220 – 400 K) is performed pointing out optimal working conditions. At present stage of technology, the experimentally measured R0A values of interband cascade type-II superlattice detectors at room temperature are higher than those predicted for HgCdTe photodiodes. It is shown that these novel HOT detectors have emerged as competitors of HgCdTe photodetectors.

© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Pusz, A. Kowalewski, W. Gawron, E. Plis, S. Krishna, A. Rogalski, "MWIR type-II InAs/GaSb superlattice interband cascade photodetectors", Proc. SPIE 8868, Infrared Sensors, Devices, and Applications III, 88680M (19 September 2013); doi: 10.1117/12.2035499; https://doi.org/10.1117/12.2035499
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