19 September 2013 MWIR type-II InAs/GaSb superlattice interband cascade photodetectors
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Abstract

Recently, a new strategy used to achieve high operation temperature (HOT) infrared photodetectors including cascade devices and alternate materials such as type-II superlattices has been observed. Another method to reduce detector’s dark current is reducing volume of detector material via a concept of photon trapping detector.

In this paper, the performance of a novel HOT detector designing so-called interband cascade type-II MWIR InAs/GaSb superlattice detectors is presented. Detailed analysis of the detector’s performance (such as dark current, RA product, current responsivity, and response time) versus bias voltage and operating temperatures (220 – 400 K) is performed pointing out optimal working conditions. At present stage of technology, the experimentally measured R0A values of interband cascade type-II superlattice detectors at room temperature are higher than those predicted for HgCdTe photodiodes. It is shown that these novel HOT detectors have emerged as competitors of HgCdTe photodetectors.

© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Pusz, W. Pusz, A. Kowalewski, A. Kowalewski, W. Gawron, W. Gawron, E. Plis, E. Plis, S. Krishna, S. Krishna, A. Rogalski, A. Rogalski, } "MWIR type-II InAs/GaSb superlattice interband cascade photodetectors", Proc. SPIE 8868, Infrared Sensors, Devices, and Applications III, 88680M (19 September 2013); doi: 10.1117/12.2035499; https://doi.org/10.1117/12.2035499
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