26 September 2013 Silicon carbide: an advanced platform for next generation quantum devices
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Abstract
Optical and paramagnetic deep defects in silicon carbide (SiC) offer a vast opportunity to realize advanced quantum device and sensors based on SiC bulk material and SiC nanostructures. Nanostructures in silicon carbide such as nanoparticle and quantum dots possess strong sub-bandgap emission due to both quantum confinement and radiative recombination in deep defects, making them ideal as bio-markers. We will highlight silicon carbide extremely rich underlying resources, ideal for the implementation of next generation nanophotonics and spintronics quantum devices and related biomedical applications. Specifically, we show here the isolation of intrinsic defects in SiC achieved by electron irradiation of the material, yielding single photon emission.
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S. Castelletto, B. C. Johnson, A. Parker, "Silicon carbide: an advanced platform for next generation quantum devices", Proc. SPIE 8875, Quantum Communications and Quantum Imaging XI, 88750U (26 September 2013); doi: 10.1117/12.2023547; https://doi.org/10.1117/12.2023547
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