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24 September 2013 Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices
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Infrared detector arrays operating in space must be able to withstand defect-inducing proton radiation without performance degradation. Therefore, it is imperative that the proton-radiation hardness of infrared detector materials be investigated. Photoluminescence (PL) is sensitive to defects in materials, and thus can be used to quantify the effects of proton-radiation-induced defects. The excitation intensity-dependent PL was used to examine of a set of InAs/InAsSb superlattices before and after 63-MeV-proton irradiation. A proton dose of 100 kRad(Si) was applied to a different piece of each superlattice sample. The low-temperature excitation intensity dependent PL results reveal minimal increases in the carrier concentration, non-radiative recombination, and the PL full-width half-maximum. These results suggest that InAs/InAsSb superlattices are quite tolerant of proton irradiation and may be suitable for space infrared detector arrays.
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Elizabeth H. Steenbergen, Jeremy A. Massengale, Vincent M. Cowan, Zhiyuan Lin, Yong-Hang Zhang, and Christian P. Morath "Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices", Proc. SPIE 8876, Nanophotonics and Macrophotonics for Space Environments VII, 887609 (24 September 2013);

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