20 September 2013 Automated Defect Classification (ADC) and Progression Monitoring (DPM) in wafer fab reticle requalification
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Abstract
As optical lithography continues to extend into low-k1 regime, resolution of mask patterns continue to diminish, and so do mask defect requirements due to increasing MEEF. Post-inspection, mask defects have traditionally been classified by operators manually based on visual review. This approach may have worked down to 65/55nm node layers. However, starting 45nm and smaller nodes, visually reviewing 50 to sometimes 100s of defects on masks with complex modelbased OPC, SRAF, and ILT geometries, is error-prone and takes up valuable inspection tool capacity. Both these shortcomings in manual defect review are overcome by adoption of the computational solution called Automated Defect Classification (ADC) wherein mask defects are accurately classified within seconds and consistent to guidelines used by production technicians and engineers.
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T. H. Yen, T. H. Yen, Rick Lai, Rick Lai, Laurent C. Tuo, Laurent C. Tuo, Vikram Tolani, Vikram Tolani, Dongxue Chen, Dongxue Chen, Peter Hu, Peter Hu, Jiao Yu, Jiao Yu, George Hwa, George Hwa, Yan Zheng, Yan Zheng, Suresh Lakkapragada, Suresh Lakkapragada, Kechang Wang, Kechang Wang, Danping Peng, Danping Peng, Bill Wang, Bill Wang, Kaiming Chiang, Kaiming Chiang, } "Automated Defect Classification (ADC) and Progression Monitoring (DPM) in wafer fab reticle requalification", Proc. SPIE 8880, Photomask Technology 2013, 88800A (20 September 2013); doi: 10.1117/12.2031786; https://doi.org/10.1117/12.2031786
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