Controlling the sidewall angle of advanced attenuated phase-shift photomasks for 14nm and 10nm lithography

Richard Wistrom; Yoshifumi Sakamoto; Jeffery Panton; Thomas Faure; Takeshi Isogawa; Anne McGuire

doi:10.1117/12.2026853

9 September 2013 Controlling the sidewall angle of advanced attenuated phase-shift photomasks for 14nm and 10nm lithography

Richard Wistrom, Yoshifumi Sakamoto, Jeffery Panton, Thomas Faure, Takeshi Isogawa, Anne McGuire

Author Affiliations +

Proceedings Volume 8880, Photomask Technology 2013; 88800W (2013) https://doi.org/10.1117/12.2026853
Event: SPIE Photomask Technology, 2013, Monterey, California, United States

Abstract

As optical lithography is extended to the 14nm and 10nm technology nodes, sidewall angle (SWA) control of photomask features becomes increasingly important. The experiments to be reported here study SWA for advanced attenuated phase-shift photomasks. SWA is evaluated from three perspectives. First, the effects of mask etch process parameters will be studied. Second, the effects of local mask environment, such as etch loading and line width, will be tested. Finally, a variety of SWA measurement methods will be compared.

Citation Download Citation

Richard Wistrom, Yoshifumi Sakamoto, Jeffery Panton, Thomas Faure, Takeshi Isogawa, and Anne McGuire "Controlling the sidewall angle of advanced attenuated phase-shift photomasks for 14nm and 10nm lithography", Proc. SPIE 8880, Photomask Technology 2013, 88800W (9 September 2013); https://doi.org/10.1117/12.2026853

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