1 October 2013 Model-based etch profile simulation of PSM films
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For advanced binary and PSM mask etch, final profile control is critically important for achieving desired mask specifications. As an aid to attain profile control, an etch profile simulation method has been developed. The method starts with an initial photoresist profile and incorporates etch rate and directionality information to predict the final etch profile. In this paper, simulated results are compared to measured etch profiles for PSM substrates. The results highlight the importance and implications of incoming resist profile and etch selectivity on final profile.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Grimbergen, Michael Grimbergen, Madhavi Chandrachood, Madhavi Chandrachood, Jeffrey Tran, Jeffrey Tran, Becky Leung, Becky Leung, Keven Yu, Keven Yu, Amitabh Sabharwal, Amitabh Sabharwal, Ajay Kumar, Ajay Kumar, "Model-based etch profile simulation of PSM films", Proc. SPIE 8880, Photomask Technology 2013, 88800X (1 October 2013); doi: 10.1117/12.2029006; https://doi.org/10.1117/12.2029006


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