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9 September 2013 Implementable and systematic mitigation of native defects in EUV masks
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Abstract
Native defects in mask blanks is one of the key issues in extreme ultraviolet lithography. If defect-free mask blanks is the only solution, the resulting cost will be very high due to the low yield of such blanks. In this paper, we present a method for fabricating defect-free-like EUV masks by implementing several novel techniques such as global pattern shift, fine metrology-orientation and precise e-beam second-alignment from blank preparation to e-beam exposure. The mitigation success rate versus mask pattern density is simulated and verified by lithographic results using mitigated masks. Our methodology provides a way to achieve defect-free-like EUV mask blanks.
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Wen-Chang Hsueh, Li-Chih Yeh, Ming-Jiun Yao, Yun-Yue Lin, Jia-Jen Chen, Shin-Chang Lee, and Anthony Yen "Implementable and systematic mitigation of native defects in EUV masks", Proc. SPIE 8880, Photomask Technology 2013, 88800Y (9 September 2013); https://doi.org/10.1117/12.2025786
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