9 September 2013 Charting CEBL's role in mainstream semiconductor lithography
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Abstract
historically kept it out of mainstream fabs. Thanks to continuing EBDW advances combined with the industry’s move to unidirectional (1D) gridded layout style, EBDW promises to cost-efficiently complement 193nm ArF immersion (193i) optical lithography in high volume manufacturing (HVM). Patterning conventional 2D design layouts with 193i is a major roadblock in device scaling: the resolution limitations of optical lithography equipment have led to higher mask cost and increased lithography complexity. To overcome the challenge, IC designers have used 1D layouts with “lines and cuts” in critical layers.1 Leading logic and memory chipmakers have been producing advanced designs with lines-and-cuts in HVM for several technology nodes in recent years. However, cut masks in multiple optical patterning are getting extremely costly. Borodovsky proposes Complementary Lithography in which another lithography technology is used to pattern line-cuts in critical layers to complement optical lithography.2 Complementary E-Beam Lithography (CEBL) is a candidate to pattern the Cuts of optically printed Lines. The concept of CEBL is gaining acceptance. However, challenges in throughput, scaling, and data preparation rate are threatening to deny CEBL’s role in solving industry’s lithography problem. This paper will examine the following issues: The challenges of massively parallel pixel writing The solutions of multiple mini-column design/architecture in: Boosting CEBL throughput Resolving issues of CD control, CDU, LER, data rate, higher resolution, and 450mm wafers The role of CEBL in next-generation solution of semiconductor lithography
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David K. Lam, David K. Lam, } "Charting CEBL's role in mainstream semiconductor lithography", Proc. SPIE 8880, Photomask Technology 2013, 888013 (9 September 2013); doi: 10.1117/12.2030838; https://doi.org/10.1117/12.2030838
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