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9 September 2013Impact of proximity model inaccuracy on patterning in electron beam lithography
Electron beam lithography is a promising technology for next generation lithography. Compared to optical
lithography, it has better pattern fidelity and larger process window. However, the proximity effect caused by the
electron forward scattering and backscattering in the resist and the underlying substrate materials has a severe influence
on the pattern fidelity when the required critical dimensions (CD) are comparable to the electron beam blur size.
Therefore, an accurate electron scattering model and a proper proximity correction play a vital role in electron beam
lithography. In this paper, we describe the model accuracy of electron scattering in terms of multiple Gaussian kernels
with an in-house proximity error correction to reduce proximity error with much better accuracy and more
self-consistency than the double Gaussian kernel on the 100-keV electron energies. The impact of various Gaussian
kernels used in the proximity correction on the lineation of typical patterns is also addressed.
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Cheng-Hung Chen, Tsung-Chih Chien, P. Y. Liu, W. C. Wang, J. J. Shin, S. J. Lin, Burn J. Lin, "Impact of proximity model inaccuracy on patterning in electron beam lithography," Proc. SPIE 8880, Photomask Technology 2013, 888014 (9 September 2013); https://doi.org/10.1117/12.2029180