9 September 2013 Shot count reduction for non-Manhattan geometries: concurrent optimization of data fracture and mask writer design
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Abstract
VSB mask writers, which create patterns using a combination of rectangles and 45 degree triangles, are ill-suited to non- Manhattan geometries. This issue is particularly acute for layouts which contain a large fraction of curvilinear “offangle” patterns such as photonic or DRAM designs. Unable to faithfully reproduce the “off-angle” structures, traditional VSB mask writers approximate the desired design using abutted rectangular shots or small shapes to smooth out line edge roughness. Fidelity to the original pattern comes at a cost of increased shot count and reduced throughput. Aselta has developed a novel fracture algorithm to dramatically reduce the shot count of such designs. Using a traditional VSB pattern generator, the new algorithm provides significant shot count reduction. When combined with a modified JBX-3200MV VSB, the shot count is reduced while maintaining the same level of fidelity. The data preparation software tool has also the capability of trading off a more accurate level of fidelity with an even more reduced shot count. The paper will first describe the basic principles of the fracturing algorithm and e-beam writer hardware configuration then demonstrate the advantage of the method on a variety of patterns.
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Russell Cinque, Tadashi Komagata, Taiichi Kiuchi, Clyde Browning, Patrick Schiavone, Paolo Petroni, Luc Martin, Thomas Quaglio, "Shot count reduction for non-Manhattan geometries: concurrent optimization of data fracture and mask writer design", Proc. SPIE 8880, Photomask Technology 2013, 88801F (9 September 2013); doi: 10.1117/12.2028944; https://doi.org/10.1117/12.2028944
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