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1 October 2013 Full chip implant correction with wafer topography OPC modeling in 2x nm bulk technologies
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Ionic implantation photolithography step considered to be non critical started to be influenced by unwanted overexposure by wafer topography with technology node downscaling evolution [1], [2]. Starting from 2xnm technology nodes, implant patterns modulated on wafer by classical implant proximity effects are also influenced by wafer topography which can cause drastic pattern degradation [2], [3]. This phenomenon is expected to be attenuated by the use of anti-reflecting coating but it increases process complexity and involves cost and cycle time penalty. As a consequence, computational lithography solutions are currently under development in order to correct wafer topographical effects on mask [3]. For ionic implantation source Drain (SD) on Silicon bulk substrate, wafer topography effects are the consequence of active silicon substrate, poly patterns, STI stack, and transitions between patterned wafer stack. In this paper, wafer topography aware OPC modeling flow taking into account stack effects for bulk technology is presented. Quality check of this full chip stack aware OPC model is shown through comparison of mask computational verification and known systematic defectivity on wafer. Also, the integration of topographical OPC model into OPC flow for chip scale mask correction is presented with quality and run time penalty analysis.
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J-C. Michel, J-C. Le Denmat, E. Sungauer, F. Robert, E. Yesilada, A-M. Armeanu, J. Entradas, J. L. Sturtevant, T. Do, and Y. Granik "Full chip implant correction with wafer topography OPC modeling in 2x nm bulk technologies", Proc. SPIE 8880, Photomask Technology 2013, 88801J (1 October 2013);

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