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9 September 2013 Alternative material to mitigate chrome degradation on high volume ArF layers
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Abstract
One of the objectives of a robust optical proximity correction (OPC) model is to simulate the process variation including 3D mask effects or mask models for different mask blanks. Assuming that the data of different reticle blanks is the same, the wafer data should be a close match for the same OPC model. In order to enhance the robustness of the OPC model, the 3D mask effects need to be reduced. A test of this would be to ensure a close match of the so called fingerprints of different reticle blanks at the wafer level. Features for fingerprint test patterns include “critical dimension through pitch” (CDTP), “inverse CDTP”, and “linearity patterns” and critical dimension (CD) difference of disposition structures. In this manuscript the proximity matching of implant layers on chrome on glass (COG) and advance binary reticle blanks will be demonstrated. We will also investigate the influence of reticle blank material including reticle process on isolated and dense features upon the proximity matching for 28 nm high volumes ArF layers such as implant and 2X metal layers. The OPC model verification has been done successfully for both bare wafer and full field wafer for implant layers. There is comparable OPC model for advanced binary and COG reticle. Moreover, the wafer critical dimension uniformity (CDU) results show that advance binary has much better wafer CDU then COG. In spite of higher reticle cost when switching over to advanced binary, there is a considerable cost reduction for the wafer fab which includes a 39% savings in total reticle cost as well as cost reduction due to minimal line holds (LH), wafer reworks and scraps due to Chrome degradation.
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Guoxiang Ning, Selvi Gopalakrishnan, Thomas Thamm, Nikolay Oleynik, Paul Ackmann, Remi Riviere, Stephanie Maelzer, and Yee Mei Foong "Alternative material to mitigate chrome degradation on high volume ArF layers", Proc. SPIE 8880, Photomask Technology 2013, 88801P (9 September 2013); https://doi.org/10.1117/12.2025466
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