9 September 2013 The recovering method of etch chamber condition by using the optical emission spectroscopy monitoring system
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Abstract
The etch chambers has been cleaned by wet process and replaced with new parts to maintain etch chamber perfectly clean. However, the wet cleaning process results in following issues. One of issues is that the critical dimension mean to target (CD MTT) and phase-shift would be changed due to the variation of etch rate, which is generally caused by the new parts and wet chamber cleaning process. Another issue is that the wet cleaning process takes long time to recover the chamber condition. Moreover, the production will be stopped until recovering the chamber condition. Therefore, the recovering time should be minimized to keep the high productivity of etch tool. The change of chamber condition during the plasma seasoning can be monitored with the optical emission spectroscopy (OES) system. The optical emission intensity represents the concentration of materials in the plasma and the surface condition of chamber. The OES peak intensities were collected during the plasma seasoning, which was applied to remove the moisture and residues. The correlation of the OES peak intensities and chamber condition was verified by the CD and phase-shift difference between pre and post chamber cleaning. This methodology was applied to optimize the seasoning time, which occupies 80% of whole the chamber cleaning process time.
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Choong Han Ryu, Jae Young Jun, Ho Yong Jung, Sang Pyo Kim, Dong Gyu Yim, "The recovering method of etch chamber condition by using the optical emission spectroscopy monitoring system", Proc. SPIE 8880, Photomask Technology 2013, 88801X (9 September 2013); doi: 10.1117/12.2026183; https://doi.org/10.1117/12.2026183
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