7 June 2013 Method of refractive index, roughness and uniformity of silicon carbide layer deposited by plasma enhanced chemical vapour deposition method
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Proceedings Volume 8883, ICPS 2013: International Conference on Photonics Solutions; 88830F (2013) https://doi.org/10.1117/12.2022135
Event: International Conference on Photonics Solutions 2013, 2013, Pattaya City, Thailand
Abstract
The silicon carbide layer was deposited on Si substrate by Plasma Enhanced Chemical Vapor Deposition method and it was shown its RFTIR spectrum is periodic in near and medium IR range by using this property refractive index of thin film was calculated. It was shown both deposition rate and uniformity of thin film were decreased by increasing substrate temperature. We also showed although the refractive index and deposition rate of SiC layer depend on the substrate temperature, and the roughness of surface was decreased but refractive index was increased by increasing substrate temperature It was shown the refractive index increases by annealing SiC thin film, at 900 °C.
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Ali Rostami, S. Yousef Shafiei, Amir Shafi-e-asl, A. R. Marami Iranaq, "Method of refractive index, roughness and uniformity of silicon carbide layer deposited by plasma enhanced chemical vapour deposition method", Proc. SPIE 8883, ICPS 2013: International Conference on Photonics Solutions, 88830F (7 June 2013); doi: 10.1117/12.2022135; https://doi.org/10.1117/12.2022135
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