25 July 2013 The behavioral approach to silicon carbide power components modeling
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Proceedings Volume 8902, Electron Technology Conference 2013; 890206 (2013) https://doi.org/10.1117/12.2031378
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
The behavioral and circuit equivalent models applied to silicon carbide semiconductor power devices have been presented. The MOSFET and Merged PiN Schottky diode (MPS) including dynamic electro-thermal modeling have been described in details. The authors also show the problems of the active power estimation for dynamic SiC MPS diode and unrealistic results for manufacturer-provided models.
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Mariusz Zubert, Mariusz Zubert, Andrzej Napieralski, Andrzej Napieralski, Małgorzata Napieralska, Małgorzata Napieralska, Grzegorz Jabłoński, Grzegorz Jabłoński, Łukasz Starzak, Łukasz Starzak, Marcin Janicki, Marcin Janicki, } "The behavioral approach to silicon carbide power components modeling", Proc. SPIE 8902, Electron Technology Conference 2013, 890206 (25 July 2013); doi: 10.1117/12.2031378; https://doi.org/10.1117/12.2031378
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