25 July 2013 Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE
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Proceedings Volume 8902, Electron Technology Conference 2013; 89020F (2013) https://doi.org/10.1117/12.2030760
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
We have investigated deep-level defects in InGaAsN/GaAs 3xQW structures by means of conventional as well as high-resolution deep level transient spectroscopy (DLTS). The three samples were grown by atmospheric pressure metalorganic vapour phase epitaxy (AP-MOVPE) in different growth temperatures (566°C, 575°C and 585°C). The DLTS measurements revealed four electron traps E1 (0.17-0.24 eV), E2 (0.36-0.38 eV), E3 (0.46-0.49 eV) and E4 (0.81-0.84 eV) and one hole trap H1(0.8 eV) in our structures. The electron trap E1 was associated with N-related complexes while the other electron traps with native defects, usually observed in GaAs-based structures EL6, EL3 and EL2, respectively. Finally, the trap E2 and H1, observed in the structure grown at lowest temperature, were associated with the same trap, which can act as both an electron and hole trap. It was thus concluded that E2/H1 may be a generation-recombination center.
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Ł. Gelczuk, M. Dąbrowska-Szata, P. Kamyczek, E. Płaczek-Popko, K. Kopalko, B. Ściana, D. Pucicki, D. Radziewicz, M. Tłaczała, "Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE", Proc. SPIE 8902, Electron Technology Conference 2013, 89020F (25 July 2013); doi: 10.1117/12.2030760; https://doi.org/10.1117/12.2030760
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