Surface passivation of MSM photodetectors made on GaAsN epitaxial layers

Iwona Zborowska-Lindert; Beata Ściana; Damian Pucicki; Damian Radziewicz; Marek Panek; Bogusław Boratyński; Andrzej Stafiniak; Maria Ramiączek-Krasowska; Marek Tłaczała

doi:10.1117/12.2031054

25 July 2013 Surface passivation of MSM photodetectors made on GaAsN epitaxial layers

Iwona Zborowska-Lindert, Beata Ściana, Damian Pucicki, Damian Radziewicz, Marek Panek, Bogusław Boratyński, Andrzej Stafiniak, Maria Ramiączek-Krasowska, Marek Tłaczała

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Proceedings Volume 8902, Electron Technology Conference 2013; 89020I (2013) https://doi.org/10.1117/12.2031054
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

In this paper application of Si3N4, AlN and polyimide to passivate GaAsN/GaAs MSM photodetectors is presented. The MSM structures were made on the undoped GaAsN epitaxial layers in which concentration of nitrogen was varied from 1.0 to 2.6 %. The dark and illuminated I-V characteristics of the devices are presented. Comparison of the dark current value and photoresponse obtained, for selected wavelengths in visible and IR range, from the MSM devices with different passivation layers is provided. Measurements of the dark current and photoresponse in the unpassivated and passivated MSM structures allowed to estimate relation between the bulk and surface components of the dark current. Therefore crystal quality of the epitaxial layers grown in different process conditions could be compared.

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Iwona Zborowska-Lindert, Beata Ściana, Damian Pucicki, Damian Radziewicz, Marek Panek, Bogusław Boratyński, Andrzej Stafiniak, Maria Ramiączek-Krasowska, and Marek Tłaczała "Surface passivation of MSM photodetectors made on GaAsN epitaxial layers", Proc. SPIE 8902, Electron Technology Conference 2013, 89020I (25 July 2013); https://doi.org/10.1117/12.2031054

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