25 July 2013 Bipolar transistor in VESTIC technology
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Proceedings Volume 8902, Electron Technology Conference 2013; 89020M (2013) https://doi.org/10.1117/12.2031182
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
VESTIC technology was proposed as an alternative for traditional CMOS technology. It offers a new FET-type twin gate junctionless device called VeSFET. In addition, in the basic VESTIC device structure many different active devices can be made, including bipolar transistors. This allows easy integration of bipolar transistors (called here VeSBJT) with VeSFET transistors. The purpose of this paper is to investigate the expected properties of VeSBJT in order to answer the following questions: are the expected parameters of VeSBJT promising enough to justify further research and fabrication experiments, and will VeSBJTs be technologically compatible with VeSFETs? Our theoretical predictions are based on the concept of effective base width for bipolar transistors with non-plane-parallel emitter and collector junctions. The conclusion is that VeSBJT can be a device with useful characteristics. As a result, VESTIC may have the potential to become a new BiCMOS-type technology.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wiesław Kuźmicz, Piotr Mierzwiński, "Bipolar transistor in VESTIC technology", Proc. SPIE 8902, Electron Technology Conference 2013, 89020M (25 July 2013); doi: 10.1117/12.2031182; https://doi.org/10.1117/12.2031182
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