25 July 2013 Fabrication and characterization of thin-film transistors with amorphous In-Ga-Zn-O layers
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Proceedings Volume 8902, Electron Technology Conference 2013; 89020N (2013) https://doi.org/10.1117/12.2031243
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
We report on the fabrication and performance of amorphous oxide thin-film transistors with In-Ga-Zn-O deposited by RF magnetron reactive sputtering for semiconductor channel layer. The influence of the electrical transport properties of the channel on the electrical parameters of thin-film transistors has been determined. By optimizing process parameters depletion-mode n-channel devices with maximum field-effect mobility (μFE) 10.1 cm2/Vs, threshold voltage Vth=-4.85V and on to off current ratio (Ion/Ioff)=2.1x102 have been demonstrated.
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A. Taube, A. Taube, J. Kaczmarski, J. Kaczmarski, M. Ekielski, M. Ekielski, D. Pucicki, D. Pucicki, E. Kamińska, E. Kamińska, A. Piotrowska, A. Piotrowska, "Fabrication and characterization of thin-film transistors with amorphous In-Ga-Zn-O layers ", Proc. SPIE 8902, Electron Technology Conference 2013, 89020N (25 July 2013); doi: 10.1117/12.2031243; https://doi.org/10.1117/12.2031243
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